Electron mobility in nitride materials

COMPARISON OF GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTORS MODELING IN TWO AND THREE DIMENSIONS by

First-principles method for electron-phonon coupling and electron mobility Applications to two-dimensional materials

Physics Based Virtual Source Compact Model of Gallium-Nitride High Electron Mobility Transistors

Electron Transport in III-V Nitride Two-Dimensional Electron Gases

We present a study of electron scattering processes in AlGaN/GaN two-dimensional electron gases. A theoretical study of the effect of deformation potential scattering from strain fields surrounding dislocations is presented. The most important scattering mechanisms limiting electron transport are identified. We find that for AlGaN/GaN 2DEGs, mobility is limited by alloy scattering at high 2DEG ...

Electron states in boron nitride nanocones

We apply first-principles calculations to study the electronic structure of boron nitride nanocones with disclinations of different angles θ = nπ/3. Nanocones with odd values of n present antiphase boundaries that cause a reduction of the work function of the nanocones, relative to the bulk BN value, by as much as 2 eV. In contrast, nanocones with even values of n do not have such defects and p...